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AOI418 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOI418
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOI418 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AOD418/AOI418
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS= 10V)
36A
RDS(ON) (at VGS= 10V)
< 7.5m
RDS(ON) (at VGS = 4.5V)
< 11m
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
2.5
50
3
W
Power Dissipation
A
PDSM
W
TA=70°C
50
1.6
TA=25°C
Power Dissipation
B
PD
13.5
27
Avalanche energy L=0.1mH
C
36
28
TC=25°C
TC=100°C
A
TA=25°C
IDSM
A
TA=70°C
125
Pulsed Drain Current
C
Continuous Drain
Current
G
ID
Continuous Drain
Current
The AOD418/AOI418 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
mJ
Avalanche Current
C
10.5
A
36
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
16
41
20
Parameter
Typ
Max
TC=25°C
2.5
25
TC=100°C
Junction and Storage Temperature Range
-55 to 175
TO252
DPAK
Top View
Bottom View
G
S
D
G
S
D
G
G
D
D
S
S
Top View
Bottom View
TO251A
IPAK
G
D
S
Rev 0: February 2011
www.aosmd.com
Page 1 of 6


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