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AOD484 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOD484
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD484 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

  AOD484_09 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOD484_09 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOD484_09 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOD484_09 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOD484_09 Datasheet HTML 5Page - Alpha & Omega Semiconductors AOD484_09 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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background image
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
17
25
55
60
RθJC
2.3
3
W
TA=70°C
1.3
Power Dissipation
A
TA=25°C
PDSM
2.1
Repetitive avalanche energy L=0.3mH
C
33
A
mJ
Junction and Storage Temperature Range
A
PD
°C
50
25
-55 to 175
TC=100°C
Avalanche Current
C
15
ID
25
20
80
Pulsed Drain Current
C
Power Dissipation
B
TC=25°C
Continuous Drain
Current
G
Maximum
Units
Parameter
TC=25°C
TC=100°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
AOD484
30V N-Channel MOSFET
Features
VDS (V) = 30V
ID = 25 A (VGS = 10V)
RDS(ON) < 15 mΩ (VGS = 10V)
RDS(ON) < 23 mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
General Description
The AOD484 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
G
D
S
TO252
DPAK
Top View
Bottom View
G
S
D
G
S
D
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


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