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AOD2908 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOD2908
Description  100V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD2908 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AOD2908
100V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
52A
RDS(ON) (at VGS=10V)
< 13.5m
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
The AOD2908 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
V
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
100V
Drain-Source Voltage
100
Maximum
V
±20
Gate-Source Voltage
G
D
S
TO252
DPAK
TopView
Bottom View
G
G
D
D
S
S
D
VGS
IDM
IDM
IAS
EAS
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Pulsed Drain Current
J
150
A
36
75
20
A
TA=70°C
20
ID
W
TC=25°C
TC=100°C
mJ
Avalanche Current
C
7
37
120
Maximum Junction-to-Case
Pulsed Drain Current
I
Continuous Drain
Current
Power Dissipation
A
20
TC=100°C
Power Dissipation
B
PD
-55 to 175
52
Avalanche energy L=0.1mH
C
Continuous Drain
Current
IDSM
9
°C/W
°C/W
Maximum Junction-to-Ambient
A D
1.5
50
2
W
TA=70°C
1.6
TA=25°C
2.5
PDSM
A
TA=25°C
V
±20
Gate-Source Voltage
TC=25°C
°C
Thermal Characteristics
Parameter
Typ
Max
Units
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A
°C/W
RθJA
15
41
Rev 1 : Mar. 2012
www.aosmd.com
Page 1 of 6


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