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AOK18N65 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOK18N65 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page  AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 18A RDS(ON) (at VGS=10V) < 0.39 Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK18N65L Symbol The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 750V@150℃ AOK18N65 G D S Top View TO-247 G D S AOK18N65 Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC Maximum Case-to-sink A 0.5 °C/W 0.3 6.3 °C/W AOK18N65 Units A °C mJ W W/ oC °C/W 40 300 -55 to 150 Maximum Junction-to-Ambient A,D °C PD V/ns mJ V ±30 Gate-Source Voltage 18 12 TC=100°C A 80 Pulsed Drain Current C Continuous Drain Current TC=25°C ID V Units Parameter Drain-Source Voltage AOK18N65 650 Maximum Junction-to-Case 417 3.3 Avalanche Current C 595 Single pulsed avalanche energy G 1190 Parameter Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Junction and Storage Temperature Range Derate above 25 oC Repetitive avalanche energy C TC=25°C Thermal Characteristics 5 Power Dissipation B G D S Top View TO-247 G D S AOK18N65 Rev0: Dec 2011 www.aosmd.com Page 1 of 5 |
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Similar Description - AOK18N65 |
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