AOK20S60 datasheet(2/6 Pages) AOSMD

Part #	AOK20S60

Description	600V 20A a MOS Power Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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2 / 6 page

AOK20S60

Symbol

Min

Typ

Max

Units

600

-

650

700

-

1

-

10

-

IGSS

Gate-Body leakage current

-

±100

n

Α

VGS(th)

Gate Threshold Voltage

2.8

3.4

4.1

V

-

0.18

0.199

Ω

-

0.48

0.53

Ω

VSD

-

0.84

-

V

IS

Maximum Body-Diode Continuous Current

-

20

A

ISM

-

80

A

Ciss

-

1038

-

pF

Coss

-

68

-

pF

Co(er)

-

56.6

-

pF

Co(tr)

-

176.5

-

pF

Crss

-

2.1

-

pF

Rg

-

9.3

-

Ω

Qg

-

19.8

-

nC

Qgs

-

4.6

-

nC

Qgd

-

7.6

-

nC

tD(on)

-

27.5

-

ns

tr

-

32

-

ns

tD(off)

-

87.5

-

ns

tf

-

30

-

ns

trr

-

350

-

ns

Irm

-

27

-

A

Qrr

-

5.7

-

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=0V, VDS=100V, f=1MHz

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

ID=250µA, VGS=0V, TJ=150°C

Effective output capacitance, energy

VGS=0V, VDS=0 to 480V, f=1MHz

SWITCHING PARAMETERS

IDSS

Effective output capacitance, time

RDS(ON)

Static Drain-Source On-Resistance

IS=10A,VGS=0V, TJ=25°C

Diode Forward Voltage

Input Capacitance

VGS=0V, VDS=100V, f=1MHz

Output Capacitance

IF=10A,dI/dt=100A/µs,VDS=400V

Reverse Transfer Capacitance

BVDSS

VGS=10V, VDS=400V, ID=10A,

RG=25Ω

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=480V, ID=10A

Gate Source Charge

Gate Drain Charge

VGS=10V, ID=10A, TJ=25°C

VDS=480V, TJ=150°C

Zero Gate Voltage Drain Current

Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V

Maximum Body-Diode Pulsed Current

C

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

Body Diode Reverse Recovery Time

Peak Reverse Recovery Current

IF=10A,dI/dt=100A/µs,VDS=400V

V

VGS=10V, ID=10A, TJ=150°C

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

µA

VDS=0V, VGS=±30V

VDS=600V, VGS=0V

VDS=5V,ID=250µA

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=60mH, IAS=2.5A, VDD=150V, Starting TJ=25°C

H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.

I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.

J. Wavesoldering only allowed at leads.

Rev 0: Jan 2012

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