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AOL1414 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOL1414 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AOL1414 Symbol Min Typ Max Units BVDSS 30 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1 1.5 2 V ID(ON) 100 A 4.9 6.5 TJ=125°C 6.9 8.3 6 7.5 m Ω gFS 90 S VSD 0.74 1 V IS 85 A Ciss 2100 2520 pF Coss 536 pF Crss 165 231 pF Rg 0.5 0.95 1.5 Ω Qg(4.5V) 19.7 24 nC Qgs 3.6 4.6 nC Qgd 7.9 nC tD(on) 5.9 10 ns tr 11 17 ns tD(off) 36.2 55 ns tf 12 18 ns trr 35 42 ns Qrr 33 50 nC Continuous Drain Current TC=25°C TC=100°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Gate Drain Charge VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime m Ω VGS=4.5V, ID=20A IS=1A,VGS=0V VDS=5V, ID=20A Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS=VGS ID=250µA VDS=30V, VGS=0V VDS=0V, VGS= ±12V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=100A/µs A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev 5: May 2010 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Similar Part No. - AOL1414_10 |
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Similar Description - AOL1414_10 |
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