AON2240

Symbol

Min

Typ

Max

Units

40

V

1

5

±100

nA

Gate Threshold Voltage

1.4

1.9

2.4

V

32

A

16.8

21

24.5

31

22.6

29

m

Ω

33

S

0.75

1

V

3.5

A

415

pF

112

pF

11

pF

1

2.2

3.5

Ω

6.5

12

nC

3

6

nC

1.2

nC

1.1

nC

4

ns

t

3

ns

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

V

=10V, V =20V, R =2.5

Ω,

Turn-On Rise Time

Forward Transconductance

Turn-On DelayTime

Diode Forward Voltage

Gate Source Charge

Input Capacitance

Output Capacitance

Gate Drain Charge

Gate resistance

Total Gate Charge

Reverse Transfer Capacitance

Total Gate Charge

SWITCHING PARAMETERS

Static Drain-Source On-Resistance

µA

Zero Gate Voltage Drain Current

Gate-Body leakage current

m

Ω

STATIC PARAMETERS

Parameter

Conditions

On state drain current

Drain-Source Breakdown Voltage

3

ns

15

ns

2

ns

12.5

ns

3.5

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Turn-On Rise Time

Turn-Off Fall Time

Turn-Off DelayTime

The Power dissipation P

given application depends on the user's specific board design.

B. The power dissipation P

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

initial T

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T

G. The maximum current rating is package limited.

Rev 0 : Dec. 2011

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