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AON3613 Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors

Part # AON3613
Description  30V Complementary MOSFET
Download  9 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON3613 Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors

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background image
AON3613
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-1.3
-1.8
-2.3
V
ID(ON)
-20
A
56
68
TJ=125°C
79
96
80
100
m
gFS
8
S
VSD
-0.78
-1
V
IS
-2.5
A
Ciss
290
pF
Coss
60
pF
Crss
40
pF
Rg
16
Qg(10V)
5.8
10
nC
Qg(4.5V)
2.8
6
nC
Qgs
1.1
nC
Qgd
1.3
nC
tD(on)
6
ns
t
5
ns
m
On state drain current
P-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-4.5A
RDS(ON)
IDSS
µA
VDS=VGS, ID=-250µA
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
VGS=-4.5V, ID=-3A
Forward Transconductance
Diode Forward Voltage
V
=-10V, V =-15V, R =3.3
Ω,
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
Turn-On Rise Time
VGS=-10V, VDS=-15V, ID=-4.5A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
Static Drain-Source On-Resistance
IS=-1A,VGS=0V
VDS=-5V, ID=-4.5A
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
tr
5
ns
tD(off)
21
ns
tf
9
ns
trr
10
ns
Qrr
20
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=-10V, VDS=-15V, RL=3.3Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On Rise Time
Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs
Turn-Off DelayTime
IF=-4.5A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
A. The value of R
qJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The R
qJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
Rev 1: Sep. 2012
www.aosmd.com
Page 6 of 9


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