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AON3613 Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors |
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AON3613 Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors |
6 / 9 page AON3613 Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.3 V ID(ON) -20 A 56 68 TJ=125°C 79 96 80 100 m Ω gFS 8 S VSD -0.78 -1 V IS -2.5 A Ciss 290 pF Coss 60 pF Crss 40 pF Rg 16 Ω Qg(10V) 5.8 10 nC Qg(4.5V) 2.8 6 nC Qgs 1.1 nC Qgd 1.3 nC tD(on) 6 ns t 5 ns m Ω On state drain current P-channel Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VGS=-10V, ID=-4.5A RDS(ON) IDSS µA VDS=VGS, ID=-250µA VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage V =-10V, V =-15V, R =3.3 Ω, Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge Turn-On Rise Time VGS=-10V, VDS=-15V, ID=-4.5A Gate Source Charge Gate Drain Charge Total Gate Charge Reverse Transfer Capacitance VGS=0V, VDS=-15V, f=1MHz Static Drain-Source On-Resistance IS=-1A,VGS=0V VDS=-5V, ID=-4.5A SWITCHING PARAMETERS Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS tr 5 ns tD(off) 21 ns tf 9 ns trr 10 ns Qrr 20 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. VGS=-10V, VDS=-15V, RL=3.3Ω, RGEN=3Ω Turn-Off Fall Time Turn-On Rise Time Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs Turn-Off DelayTime IF=-4.5A, dI/dt=500A/µs Body Diode Reverse Recovery Time A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The R qJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. Rev 1: Sep. 2012 www.aosmd.com Page 6 of 9 |
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