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Motorola Bipolar Power Transistor Device Data

Designer's™ Data Sheet

SWITCHMODE Series

PNP Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-

age, high–speed, power switching in inductive circuits where fall time is critical. They

are particularly suited for line operated switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Fast Turn–Off Times

100 ns Inductive Fall Time @ 25

_C (Typ)

125 ns Inductive Crossover Time @ 25

°C (Typ)

Operating Temperature Range – 65 to + 150

_C

100

_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJE5850

MJE5851

MJE5852

Unit

Collector–Emitter Voltage

VCEO(sus)

300

350

400

Vdc

Collector–Emitter Voltage

VCEV

350

400

450

Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Collector Current — Continuous

Peak (1)

IC

ICM

8.0

1 6

Adc

Base Current — Continuous

Peak (1)

IB

IBM

4.0

8.0

Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

80

0.640

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.25

_C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE5850/D

MJE5850

MJE5851

MJE5852

8 AMPERE

PNP SILICON

POWER TRANSISTORS

300, 350, 400 VOLTS

80 WATTS

*Motorola Preferred Device

CASE 221A–06

TO–220AB

*

*