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AON6416 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6416
Description  30V N-Channel MOSFET
Download  7 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6416 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6416
30V N-Channel MOSFET
SDMOS
TM
General Description
Product Summary
VDS
ID (at VGS=10V)
22A
RDS(ON) (at VGS=10V)
< 8m
Ω
RDS(ON) (at VGS = 4.5V)
< 14m
Ω
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
110
Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter
Typ
Max
TC=25°C
2.4
12.5
TC=100°C
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
17
44
21
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
The AON6416 is fabricated with SDMOS
TM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
Repetitive avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
11
Continuous Drain
Current
45
14
A
30
A
TA=25°C
IDSM
A
TA=70°C
ID
22
17
TC=25°C
TC=100°C
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
31
1.5
TA=25°C
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
3.4
53
4
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
Rev 1: November 2010
www.aosmd.com
Page 1 of 7


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