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AON6502 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON6502 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AON6502 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1 1.5 2 V 1.7 2.2 TJ=125°C 2.2 2.8 2.2 2.7 m Ω gFS 85 S VSD 0.7 1 V IS 85 A Ciss 3430 pF Coss 1327 pF Crss 175 pF Rg 0.3 0.7 1.1 Ω Qg(10V) 53 64 nC Qg(4.5V) 25 30 nC Qgs 7.8 nC Qgd 10.3 nC tD(on) 7.5 ns tr 5.0 ns t 33.8 ns Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, R =3 Ω Turn-On DelayTime ID=250µA, VGS=0V VGS=10V, ID=20A Gate-Body leakage current Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge Gate Source Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS VGS=10V, VDS=15V, ID=20A Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz VDS=VGS, ID=250µA VDS=0V, VGS= ±20V Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Forward Transconductance IS=1A,VGS=0V VDS=5V, ID=20A DYNAMIC PARAMETERS VGS=4.5V, ID=20A RDS(ON) Static Drain-Source On-Resistance Diode Forward Voltage m Ω tD(off) 33.8 ns tf 9.8 ns trr 22 ns Qrr 58 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Turn-Off DelayTime RGEN=3Ω Turn-Off Fall Time IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev 0: Nov 2011 www.aosmd.com Page 2 of 6 |
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