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AON6512 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6512
Description  30V N-Channel AlphaMOS
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6512 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6512
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
ID (at VGS=10V)
150A
RDS(ON) (at VGS=10V)
< 1.7m
RDS(ON) (at VGS = 4.5V)
< 2.4m
Application
100% UIS Tested
100% Rg Tested
Symbol
VDS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
Drain-Source Voltage
30
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
VDS
VGS
IDM
IAS
EAS
VDS Spike
VSPIKE
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
1.1
55
1.5
W
Power Dissipation
A
PDSM
W
TA=70°C
83
4.7
TA=25°C
TC=25°C
7.4
33
TC=100°C
Power Dissipation
B
PD
mJ
Avalanche Current
C
43
Continuous Drain
Current
123
54
A
70
Avalanche energy L=0.05mH
C
A
TA=25°C
IDSM
A
Max
V
TA=70°C
ID
150
115
TC=25°C
TC=100°C
340
Pulsed Drain Current
C
Continuous Drain
Current
G
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
100ns
36
V
Maximum Junction-to-Ambient
A
°C/W
RθJA
14
40
17
Units
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Typ
Rev 0: Nov 2011
www.aosmd.com
Page 1 of 6


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