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AON6928 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6928
Description  30V Dual Asymmetric N-Channel AlphaMOS
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6928 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6928
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
Q1
Q2
30V
30V
ID (at VGS=10V)
30A
36A
RDS(ON) (at VGS=10V)
<8.2m
<2.9m
RDS(ON) (at VGS = 4.5V)
<11.5m
Ω <4.4mΩ
100% UIS Tested
Application
100% Rg Tested
Symbol
VDS
V
Parameter
Gate-Source Voltage
Drain-Source Voltage
Absolute Maximum Ratings TA=25°C unless otherwise noted
Units
V
V
±20
±20
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
30
VDS
Max Q1
Max Q2
Top View
Bottom View
PIN1
DFN5X6
Top View
Bottom View
Bottom View
VGS
IDM
IAS
EAS
VDS Spike
VSPIKE
TJ, TSTG
Parameter
Symbol
Typ Q1
Typ Q2
Max Q1 Max Q2
t ≤ 10s
29
24
35
29
Steady-State
56
50
67
60
Steady-State
RθJC
3.3
3
4
3.8
100ns
36
V
TC=25°C
Avalanche Energy L=0.05mH
C
°C/W
°C/W
Maximum Junction-to-Ambient
A D
RθJA
Maximum Junction-to-Ambient
A
°C/W
Thermal Characteristics
3.6
Maximum Junction-to-Case
TC=25°C
TC=100°C
Power Dissipation
A
PDSM
TA=25°C
Power Dissipation
B
TA=70°C
PD
31
TC=100°C
Pulsed Drain Current
C
Continuous Drain
Current
G
ID
35
12.5
TA=25°C
Gate-Source Voltage
mJ
Avalanche Current
C
Continuous Drain
Current
A
13
Units
46
31
53
A
13
4.3
°C
W
17
24
33
V
28
±20
±20
W
TA=70°C
30
30
36
23
117
A
144
IDSM
2.3
2.7
Junction and Storage Temperature Range
-55 to 150
Rev 0 : Nov. 2012
www.aosmd.com
Page 1 of 10


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