AON7242

Symbol

Min

Typ

Max

Units

40

V

1

5

100

nA

Gate Threshold Voltage

1.3

1.8

2.3

V

255

A

3.2

3.9

4.9

6.0

4.5

5.8

m

Ω

80

S

0.69

1

V

50

A

1575

1970

2365

pF

375

540

705

pF

12

41

70

pF

0.4

0.8

1.2

Ω

21

26.5

32

nC

9

11.9

15

nC

6.2

nC

2.2

nC

7

ns

t

16

ns

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Gate Source Charge

Gate Drain Charge

Total Gate Charge

SWITCHING PARAMETERS

Maximum Body-Diode Continuous Current

G

Input Capacitance

Forward Transconductance

Diode Forward Voltage

V

=10V, V =20V, R =1

Ω,

Gate resistance

Total Gate Charge

Reverse Transfer Capacitance

Static Drain-Source On-Resistance

µA

Zero Gate Voltage Drain Current

Gate-Body leakage current

m

Ω

On state drain current

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

16

ns

23

ns

3

ns

12

16

20

ns

36

47

58

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Power dissipation P

application depends on the user's specific board design.

B. The power dissipation P

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

initial T

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

G. The maximum current rating is package limited.

Rev 0: July 2011

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