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ADM663 Datasheet(PDF) 5 Page - Analog Devices |
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ADM663 Datasheet(HTML) 5 Page - Analog Devices |
5 / 9 page ADM663A/ADM666A REV. 0 –5– the current drain to a low quiescent (9 µA maximum) current. This is very useful for low power applications. The SHDN input should be driven with a CMOS logic level signal since the input threshold is 0.3 V. In TTL systems, an open collector driver with a pull-up resistor may be used. If the shutdown function is not being used, then it should be connected to GND. Low Supply or Low Battery Detection The ADM666A contains on-chip circuitry for low power supply or battery detection. If the voltage on the LBI pin falls below the internal 1.3 V reference, then the open drain output LBO will go low. The low threshold voltage may be set to any voltage above 1.3 V by appropriate resistor divider selection. R3 = R4 V BATT 1.3 V −1 where R3 and R4 are the resistive divider resistors and VBATT is the desired low voltage threshold. Since the LBI input leakage current is less than 10 nA, large val- ues may be selected for R3 and R4 in order to minimize loading. For example, a 6 V low threshold may be set using 10 M Ω for R3 and 2.7 M Ω for R4. ADM666A SENSE V OUT GND V IN V SET LBI +1.3V TO +15V OUTPUT +2V TO +16V INPUT R CL R2 R1 LBO SHDN R3 R4 LOW BATTERY OUTPUT Figure 6. ADM666A Adjustable Output with Low Battery Detection High Current Operation The ADM663A contains an additional output, VOUT1, suitable for directly driving the base of an external NPN transistor. Fig- ure 7 shows a configuration which can be used to provide +5 V with boosted current drive. A 1 Ω current sensing resistor limits the current at 0.5 A. ADM663A V OUT1 V OUT2 GND V IN SHDN 2N4237 V IN 100 Ω 1.0 Ω SENSE V SET + 10 µF + 10 µF SHUTDOWN +5V, 0.5A OUTPUT Figure 7. ADM663A Boosted Output Current (0.5 A) The resistor values may be selected by first choosing a value for R1 and then selecting R2 according to the following equation: R2 = R1× V OUT 1.30 −1 The input leakage current on VSET is 10 nA maximum. This al- lows large resistor values to be chosen for R1 and R2 with little degradation in accuracy. For example, a 1 M Ω resistor may be selected for R1, and then R2 may be calculated accordingly. The tolerance on VSET is guaranteed at less than ±30 mV so in most applications, fixed resistors will be suitable. ADM663A ADM666A SENSE V OUT(2) GND V IN V SET SHDN +1.3V TO +15V OUTPUT +2V TO +16V INPUT R CL R2 R1 Figure 5. Adjustable Output Current Limiting Current limiting may be achieved by using an external current sense resistor in series with VOUT(2). When the voltage across the sense resistor exceeds the internal 0.5 V threshold, current limiting is activated. The sense resistor is therefore chosen such that the voltage across it will be 0.5 V when the desired current limit is reached. R CL = 0.5 I CL where RCL is the current sense resistor, ICL is the maximum current limit. The value chosen for RCL should also ensure that the current is limited to less than the 100 mA absolute maximum rating and also that the power dissipation will also be within the package maximum ratings. If current limiting is employed, there will be an additional volt- age drop across the sense resistor that must be considered when determining the regulators dropout voltage. If current limiting is not used, the SENSE input should be con- nected to VOUT(2). Shutdown Input (SHDN) The SHDN input allows the regulator to be turned off with a logic level signal. This will disable the output and reduce Table I. Output Voltage Selection VSET VOUT GND +5 V VIN +3 V R1/R2 ADJ |
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