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SBT20100UCT_T0_10001 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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SBT20100UCT_T0_10001 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 4 page PAGE . 1 November 22,2012-REV.00 SBT20100UCT LOW VF SCHOTTKY RECTIFIER VOLTAGE 100 Volts 20 Amperes FEATURES • Low forward voltage drop, low power losses • High efficiency operation • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight : 0.0655 ounces, 1.859 grams. CURRENT MAXIMUM RATINGS(TA=25oC unless otherwise noted) ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) Note : 1. Mounted on an FR4 PCB, single-sided copper, with 100cm2 copper pad area PARAMETER SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum rms voltage VRMS 70 V Maximum dc blocking voltage VR 100 V Maximum average forward rectified current per device per diode I F(AV) 20 10 A Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load per diode I FSM 200 A Typical thermal resistance ( Not e 1) RΘJC 2 O C/W Operating junction temperature range TJ -55 to + 150 oC Storage temperature range TSTG -55 to + 150 oC PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Breakdown voltage per diode VBR I R=0.5mA 100 - - V Instantaneous forward voltage per diode VF I F=3A I F=5A I F=10A TJ=25oC - - - 0.45 0.49 0.59 - - 0.65 V I F=3A I F=5A I F=10A TJ=125oC - - - 0.36 0.43 0.56 - - - V Reverse current per diode I R VR=80V - 10 - μA VR=100V TJ=25oC TJ=125oC - - - 15 180 - μA mA 0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.058(1.47) 0.042(1.07) 0.038(0.96) 0.019(0.50) 0.100(2.54) 0.100(2.54) 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) 0.115(2.92) 0.080(2.03) 0.025(0.65)MAX. |
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