NXP Semiconductors

BUK9Y3R0-40E

N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56

BUK9Y3R0-40E

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Product data sheet

12 February 2013

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5. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

S

source

2

S

source

3

S

source

4

G

gate

mb

D

mounting base; connected to

drain

mb

1 2 3 4

LFPAK; Power-

SO8 (SOT669)

S

D

G

mbb076

6. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

BUK9Y3R0-40E

LFPAK;

Power-SO8

plastic single-ended surface-mounted package; 4 leads

SOT669

7. Marking

Table 4.

Marking codes

Type number

Marking code

BUK9Y3R0-40E

93E040

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

40

V

drain-gate voltage

-

40

V

-10

10

V

gate-source voltage

[1][2]

-15

15

V

[3]

-

100

A

drain current

[3]

-

100

A

peak drain current

-

718

A

total power dissipation

-

194

W