NXP Semiconductors

BUK7Y6R0-60E

N-channel 60 V, 6.0 mΩ standard level MOSFET in LFPAK56

BUK7Y6R0-60E

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2013. All rights reserved

Product data sheet

20 February 2013

7 / 13

003aai692

0

60

120

180

0

2

4

6

(A)

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah027

0

1

2

3

4

5

-60

0

60

120

180

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aah028

0

2

4

6

(A)

max

typ

min

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aai695

0

5

10

15

20

0

20

40

60

80

100

(mΩ)

7

5

4.5

5.5

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values