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BUK7Y6R0-60E Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7Y6R0-60E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK7Y6R0-60E N-channel 60 V, 6.0 mΩ standard level MOSFET in LFPAK56 BUK7Y6R0-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 20 February 2013 7 / 13 003aai692 0 60 120 180 0 2 4 6 VGS(V) ID (A) Tj = 25°C Tj = 175 °C Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah027 0 1 2 3 4 5 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 9. Gate-source threshold voltage as a function of junction temperature 003aah028 10-6 10-5 10-4 10-3 10-2 10-1 0 2 4 6 VGS(V) ID (A) max typ min Fig. 10. Sub-threshold drain current as a function of gate-source voltage 003aai695 0 5 10 15 20 0 20 40 60 80 100 ID(A) RDSon (mΩ) VGS(V) = 10 7 5 4.5 5.5 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values |
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