NXP Semiconductors

BUK9Y12-100E

N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56

BUK9Y12-100E

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Product data sheet

20 February 2013

7 / 13

003aai842

0

60

120

180

0

1

2

3

4

(A)

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah025

0

0.5

1

1.5

2

2.5

3

-60

0

60

120

180

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aah026

0

1

2

3

(A)

max

typ

min

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aai845

0

10

20

30

0

20

40

60

80

100

(mΩ)

4.5

2.8

2.6

3

3.5

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values