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BUK9Y12-100E Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9Y12-100E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 BUK9Y12-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 20 February 2013 7 / 13 003aai842 0 60 120 180 0 1 2 3 4 VGS(V) ID (A) Tj = 25 °C Tj = 175 °C Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah025 0 0.5 1 1.5 2 2.5 3 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 9. Gate-source threshold voltage as a function of junction temperature 003aah026 10-6 10-5 10-4 10-3 10-2 10-1 0 1 2 3 VGS (V) ID (A) max typ min Fig. 10. Sub-threshold drain current as a function of gate-source voltage 003aai845 0 10 20 30 0 20 40 60 80 100 ID(A) RDSon (mΩ) 4.5 VGS(V) = 10 2.8 2.6 3 3.5 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values |
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