BUK9Y38-100E datasheet(6/13 Pages) NXP

Part #	BUK9Y38-100E

Description	N-channel 100 V, 38 m廓 logic level MOSFET in LFPAK56

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NXP Semiconductors

BUK9Y38-100E

N-channel 100 V, 38 mΩ logic level MOSFET in LFPAK56

BUK9Y38-100E

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Product data sheet

14 February 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Ciss

input capacitance

-

1905

2541

pF

Coss

output capacitance

-

137

165

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

-

90

123

pF

td(on)

turn-on delay time

-

10

-

ns

tr

rise time

-

18

-

ns

td(off)

turn-off delay time

-

31

-

ns

tf

fall time

VDS = 80 V; RL = 10 Ω; VGS = 5 V;

RG(ext) = 5 Ω

-

18

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.78

1.2

V

trr

reverse recovery time

-

31

-

ns

Qr

recovered charge

IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V

-

44

-

nC

003aaj054

0

16

32

48

64

0

1

2

3

4

VDS(V)

ID

(A)

VGS(V) = 10

2.6

2.8

4.5

2.4

2.2

3

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aaj055

0

20

40

60

80

100

0

2

4

6

8

10

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

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BUK9Y38-100E Datasheet(PDF) 6 Page - NXP Semiconductors

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