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BUK9Y43-60E Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK9Y43-60E Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 13 page BUK9Y43-60E N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 20 February 2013 Product data sheet Scan or click this QR code to view the latest information for this product 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 - - 22 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 45 W Static characteristics RDSon drain-source on-state resistance VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 35.8 43 mΩ Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 5 A; VDS = 48 V; Tj = 25 °C; Fig. 13; Fig. 14 - 3.4 - nC |
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