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BQ24157 Datasheet(PDF) 5 Page - Texas Instruments |
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BQ24157 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 39 page bq24157 www.ti.com SLUSB80 – SEPTEMBER 2012 ELECTRICAL CHARACTERISTICS Circuit of Figure 2, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT CURRENTS VBUS > VBUS(min), PWM switching 10 mA I(VBUS) VBUS supply current control VBUS > VBUS(min), PWM NOT switching 5 0°C < TJ < 85°C, CD=1 or HZ_MODE=1 15 23 μA 0°C < TJ < 85°C, V(CSOUT) = 4.2 V, Ilgk Leakage current from battery to VBUS pin 5 μA High Impedance mode, VBUS = 0 V 0°C < TJ < 85°C, V(CSOUT) = 4.2 V, Battery discharge current in High Impedance High Impedance mode, V = 0 V, SCL, SDA, 23 μA mode, (CSIN, CSOUT, SW pins) OTG = 0 V or 1.8 V VOLTAGE REGULATION V(OREG) Output regulation voltage programable range Operating in voltage regulation, programmable 3.5 4.44 V TA = 25°C –0.5% 0.5% Voltage regulation accuracy –1% 1% CURRENT REGULATION (FAST CHARGE) V(LOWV) ≤ V(CSOUT) < V(OREG), IO(CHARGE) Output charge current programmable range VBUS > V(SLP), R(SNS) = 68 mΩ, LOW_CHG=0, 550 1250 mA Programmable VLOWV ≤ VCSOUT < VOREG, VBUS >VSLP, RSNS= 68 Low charge current m Ω, 325 350 mA LOW_CHG=1, OTG=High Regulation accuracy of the voltage across R(SNS) 37.4 mV ≤ V(IREG)< 44.2mV –3.5% 3.5% (for charge current regulation) 44.2 mV ≤ V(IREG) -3% 3% V(IREG) = IO(CHARGE) × R(SNS) WEAK BATTERY DETECTION V(LOWV) Weak battery voltage threshold programmable 3.4 3.7 V Adjustable using I2C control range2(1) Weak battery voltage accuracy –5% 5% Hysteresis for V(LOWV) Battery voltage falling 100 mV Deglitch time for weak battery threshold Rising voltage, 2-mV over drive, tRISE = 100 ns 30 ms CD, OTG and SLRST PIN LOGIC LEVEL VIL Input low threshold level 0.4 V VIH Input high threshold level 1.3 V I(bias) Input bias current Voltage on control pin is 5 V 1.0 µA CHARGE TERMINATION DETECTION Termination charge current programmable range V(CSOUT) > V(OREG) – V(RCH), VBUS > V(SLP), mA I(TERM) 50 400 R(SNS) = 68 mΩ, Programmable Deglitch time for charge termination Both rising and falling, 2-mV overdrive, 30 ms tRISE, tFALL = 100 ns 3.4 mV ≤ V(IREG_TERM) ≤ 6.8 mV –15% 15% Regulation accuracy for termination current across R(SNS) 6.8 mV < V(IREG_TERM) ≤ 17 mV –10% 10% V(IREG_TERM) = IO(TERM) × R(SNS) 17 mV < V(IREG_TERM) ≤ 27.2 mV –5.5% 5.5% (1) While in 15-min mode, if a battery that is charged to a voltage higher than this voltage is inserted, the charger enters Hi-Z mode and awaits I2C commands. Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links :bq24157 |
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