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CSD16556Q5B Datasheet(PDF) 4 Page - Texas Instruments

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Part # CSD16556Q5B
Description  25-V N-Channel NexFET Power MOSFETs
Download  12 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CSD16556Q5B Datasheet(HTML) 4 Page - Texas Instruments

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0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
0.5
1
1.5
2
2.5
3
3.5
4
0
2
4
6
8
10
12
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 30A
TC = 125ºC Id = 30A
G001
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
Qg - Gate Charge (nC)
ID = 30A
VDS =15V
G001
10
100
1000
10000
100000
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
0
20
40
60
80
100
120
140
160
180
200
0
0.1
0.2
0.3
0.4
0.5
VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =6.5V
VGS =4.5V
G001
0
20
40
60
80
100
120
140
160
180
200
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
CSD16556Q5B
SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
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