TPS23785BPWP datasheet(6/47 Pages) TI

Part #	TPS23785BPWP

Description	High-Power, High-Efficiency PoE PD and DC-to-DC Controller

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Manufacturer	TI [Texas Instruments]

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TPS23785B

SLUSB90A – DECEMBER 2012 – REVISED DECEMBER 2012

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ELECTRICAL CHARACTERISTICS – PoE AND CONTROL

[VDD = VDD1] or [VDD1 = RTN], VC = RTN, COM = RTN = ARTN, all voltages referred to VSS unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

DETECTION (DEN)

(VDD = VDD1 = RTN = VSUPPLY positive)

Measure ISUPPLY

Detection current

VDD = 1.6 V

62

64.3

66.5

μA

VDD = 10 V

399

406

414

VDD = 10 V, float DEN, measure ISUPPLY,

Detection bias current

5.6

10

μA

Note: Not during Mark state

VPD_DIS

Hotswap disable threshold

3

4

5

V

DEN leakage current

VDEN = VDD = 57 V, float VDD1 and RTN, measure IDEN

0.1

5

μA

CLASSIFICATION (CLS)

(VDD = VDD1 = RTN = VSUPPLY positive)

13 V

≤ VDD ≤ 21 V, Measure ISUPPLY

RCLS = 1270 Ω (Class 0)

1.8

2.1

2.4

RCLS = 243 Ω (Class 1)

9.9

10.4

10.9

Classification current,

ICLS

mA

applies to both cycles

RCLS = 137 Ω (Class 2)

17.6

18.5

19.4

RCLS = 90.9 Ω (Class 3)

26.5

27.7

29.3

RCLS = 63.4 Ω (Class 4)

38

39.7

42

Classification mark resistance

5.6 V

≤ VDD ≤ 9.4 V

7.5

9.7

12

k

Ω

VCL_ON

Regulator turns on, VDD rising

11.2

11.9

12.6

Classification regulator lower

V

threshold

VCL_H

Hysteresis(1)

1.55

1.65

1.75

VCU_OFF

Regulator turns off, VDD rising

21

22

23

Classification regulator upper

V

threshold

VCU_H

Hysteresis(1)

0.5

0.75

1

VMSR

Mark state reset

VDD falling

3

4

5

V

Leakage current

VDD = 57 V, VCLS = 0 V, DEN = VSS, measure ICLS

1

μA

PASS DEVICE (RTN)

(VDD1 = RTN)

On resistance

0.25

0.43

0.75

Ω

Current limit

VRTN = 1.5 V, VDD = 48 V, pulsed measurement

850

970 1100

mA

Inrush limit

VRTN = 2 V, VDD: 0 V → 48 V, pulsed measurement

100

140

180

mA

Foldback voltage threshold

VDD rising

11

12.3

13.6

V

UVLO

VUVLO_R

VDD rising

33.9

35

36.1

UVLO threshold

V

VUVLO_H

Hysteresis(1)

4.4

4.55

4.76

T2P

Perform classification algorithm, VT2P-RTN = 1 V,

ON characteristic

2

mA

CTL = ARTN

Leakage current

VT2P = 18 V, CTL = VB

10

μA

tT2P

Delay

From start of switching to T2P active

5

9

15

ms

THERMAL SHUTDOWN

Turnoff temperature

TJ rising

135

145

155

°C

Hysteresis(2)

20

°C

(1)

The hysteresis tolerance tracks the rising threshold for a given device.

(2)

These parameters are specified by design and are not production tested.

6

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