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SI7655DN Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7655DN Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si7655DN New Product Document Number: 63617 S12-2393-Rev. B, 15-Oct-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Load Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile ( www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) - 20 0.0036 at VGS = - 10 V - 40e 72 nC 0.0048 at VGS = - 4.5 V - 40e 0.0085 at VGS = - 2.5 V - 40e Ordering Information: Si7655DN-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View 3.3 mm 3.3 mm G 1 2 3 4 8 7 6 5 S S S D D D D PowerPAK 1212-8S 0.75 mm S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 40e A TC = 70 °C - 40e TA = 25 °C - 31a, b TA = 70 °C - 25a, b Pulsed Drain Current (t = 300 µs) IDM - 100 Continuous Source-Drain Diode Current TC = 25 °C IS - 40e TA = 25 °C - 4a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 57 W TC = 70 °C 36 TA = 25 °C 4.8a, b TA = 70 °C 3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 |
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