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TPS25910RSAT Datasheet(PDF) 11 Page - Texas Instruments |
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TPS25910RSAT Datasheet(HTML) 11 Page - Texas Instruments |
11 / 25 page EXT CHARGE INT IN Δt C I C V = ´ - LOAD IN C LOAD C V Δt I - ´ = TPS25910 www.ti.com SLUSAR6B – SEPTEMBER 2012 – REVISED MARCH 2013 Slew Rate Control Using CGATE The TPS25910 can be used with applications that require constant turn-on currents. The current is controlled by a single capacitor from the GATE terminal to ground. The TPS25910 internal MOSFET appears to operate as a source follower (following the gate voltage) in this implementation. Choose a time to charge, Δt, based on the output capacitor, input voltage VI, and desired charge current, ICHARGE. Select the device load to be less than 5 W ÷ VIN. (11) To select the gate capacitance: (12) • ICHARGE = 11 µA • CINT = 200 pF (typical) Figure 7 and Figure 8 illustrate the effects of CEXT = 0.1 µF on inrush current using TPS25910EVM-088. Figure 7. Typical Power Limited Inrush Start Up (no CEXT) Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: TPS25910 |
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