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APT50M80B2VFR Datasheet(PDF) 2 Page - Advanced Power Technology |
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APT50M80B2VFR Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 2 page ADVANCED TECHNICAL INFORMATION DYNAMIC CHARACTERISTICS APT50M80B2VFR SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Symbol IS ISM VSD dv/ dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol Ciss Coss Crss Qg Qgs Qgd td(on) t r td(off) t f Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6W MIN TYP MAX 8630 1160 440 360 57 151 16 18 60 6 UNIT pF nC ns MIN TYP MAX 58 232 1.3 5 Tj = 25°C 270 Tj = 125°C 540 Tj = 25°C 1.8 Tj = 125°C 6.2 Tj = 25°C 16 Tj = 125°C 29 THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.20 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate Dimensions in Millimeters and (Inches) 2-Plcs. These dimensions are equal to the TO-247AD without mounting hole. T-MAX™ Package Outline 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A temperature. 5 IS - -ID [Cont.], di/dt = 100A/µs, VDD - VDSS, Tj - 150°C, RG = 2.0W, 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% VR = 200V. 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. |
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