APT8065BVFR datasheet(2/4 Pages) ADPOW

Part #	APT8065BVFR

Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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10-5

10-4

10-3

10-2

10-1

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.5

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

DYNAMIC CHARACTERISTICS

APT8065BVFR

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

Symbol

IS

ISM

VSD

dv/

dt

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Symbol

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

t r

td(off)

t f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 1.6Ω

MIN

TYP

MAX

3050

3700

300

420

150

225

150

225

17

25

70

105

12

24

11

22

60

90

12

24

UNIT

pF

nC

ns

MIN

TYP

MAX

13

52

1.3

5

Tj = 25°C

200

Tj = 125°C

350

Tj = 25°C

0.7

Tj = 125°C

1.8

Tj = 25°C

11

Tj = 125°C

17

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting Tj = +25°C, L = 14.32mH, RG = 25Ω, Peak IL = 13A

2 Pulse Test: Pulse width < 380

µS, Duty Cycle < 2%

5 IS ≤ -ID [Cont.], di/dt = 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,

VR = 200V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

RθJC

RθJA

MIN

TYP

MAX

0.45

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

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