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ACT-D1M96S Datasheet(PDF) 1 Page - Aeroflex Circuit Technology |
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ACT-D1M96S Datasheet(HTML) 1 Page - Aeroflex Circuit Technology |
1 / 14 page eroflex Circuit Technology - Advanced Multichip Modules © SCD3369-1 REV C 5/31/00 BLOCK DIAGRAM I 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM I User Configureable as "2" Independent 512K X 48 X 2 Banks I High-Speed, Low-Noise, Low-Voltage TTL (LVTTL) Interface I 3.3-V Power Supply ( ±10% Tolerance) I Separate Logic and Output Driver Power Pins I Two Banks for On-Chip Interleaving (Gapless Accesses) I Up to 50-MHz Data Rates I CAS Latency (CL) Programmable to 2 Cycles From Column-Address Entry I Burst Length Programmable to 4 or 8 I Pipeline Architecture I Cycle-by-Cycle DQ-Bus Write Mask Capability With Upper and Lower Byte Control I Chip Select and Clock Enable for Enhanced-System Interfacing I Serial Burst Sequence I Auto-Refresh I 4K Refresh (Total for Both Banks) I 200-lead CQFP, cavity-up package ACT-D1M96S High Speed Multichip Module Features General Description The ACT-D1M96S device is a high-speed 96Mbit synchronous dynamic random access memory (SDRAM) organized as 2 independent 512K X 48 X 2 banks. All inputs and outputs of the ACT-D1M96S are compatible with the LVTTL interface. All inputs and outputs are synchronized with the CLK input to simplify system design and enhance use with high-speed microprocessors and caches. 96 MegaBit 3.3V Synchronous DRAM BANK B DQ16-31 16 DQ0-15 DQ32-47 CS1 CLK1 CKE1 DQMU1 DQML1 RAS1 CAS1 WE1 A0-A11 16 16 DQ64-79 16 DQ48-63 DQ80-95 CS2 CLK2 CKE2 DQMU2 DQML2 RAS2 CAS2 WE2 BA0-BA11 16 16 BANK T 1M X 16 or 512K X 16 X 2 Banks 1M X 16 or 512K X 16 X 2 Banks 1M X 16 or 512K X 16 X 2 Banks BANK B BANK T 1M X 16 or 512K X 16 X 2 Banks 1M X 16 or 512K X 16 X 2 Banks 1M X 16 or 512K X 16 X 2 Banks 12 12 S E C T I O N A S E C T I O N B |
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