ACT-9S512K8N-015L2I datasheet(3/6 Pages) AEROFLEX

Part #	ACT-9S512K8N-015L2I

Description	ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM

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Manufacturer	AEROFLEX [Aeroflex Circuit Technology]

Direct Link	http://www.aeroflex.com

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3 / 6 page

Aeroflex Circuit Technology

SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700

3

AC Characteristics

(VCC = 5.0V, VSS= 0V, TC = -55°C to +125°C or -40°C to +85°C)

Read Cycle

Parameter

Sym

–010

Min Max

–012

Min Max

–015

Min Max

–017

Min Max

–020

Min Max

–025

Min Max

Units

Read Cycle Time

tRC

10

12

15

17

20

25

ns

Address Access Time

tAA

10

12

15

17

20

25

ns

Chip Enable Access Time

tACE

10

12

15

17

20

25

ns

Output Hold from Address Change

tOH

3

4

5

ns

Output Enable to Output Valid

tOE

5

6

7

8

10

12

ns

Chip Enable to Output in Low Z (1)

tCLZ

3

ns

Output Enable to Output in Low Z (1)

tOLZ

0

ns

Chip Deselect to Output in High Z (1)

tCHZ

5

6

7

8

10

ns

Output Disable to Output in High Z (1)

tOHZ

5

6

7

8

10

ns

Note 1. Guaranteed by design, but not tested

Write Cycle

Parameter

Sym

–010

Min Max

–012

Min Max

–015

Min Max

–017

Min Max

–020

Min Max

–025

Min Max

Units

Write Cycle Time

tWC

10

12

15

17

20

25

ns

Chip Enable to End of Write

tCW

7

8

10

12

13

15

ns

Address Valid to End of Write

tAW

7

8

10

12

13

15

ns

Data Valid to End of Write

tDW

5

6

8

9

10

ns

Write Pulse Width

tWP

7

8

10

12

13

15

ns

Address Setup Time

tAS

0

ns

Address Hold Time

tAH

0

ns

Output Active from End of Write (1)

tOW

3

4

5

ns

Write to Output in High Z (1)

tWHZ

5

6

7

8

10

ns

Data Hold from Write Time

tDH

0

ns

Note 1. Guaranteed by design, but not tested

Data Retention Electrical Characteristics (Special Order Only)

VCC = 5.0V, VSS= 0V, TC = -55°C to +125°C or -40°C to +85°C)

Parameter

Sym

Test Conditions

All Speeds

Min

Typ

Max

Units

VCC for Data Retention

VDR

CE

≥ V

CC – 0.2V

2

5.5

V

Data Retention Current

ICCDR1

VCC = 3V

0.5

2.0

mA

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