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ACT-E4M32C-100F1I Datasheet(PDF) 2 Page - Aeroflex Circuit Technology |
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ACT-E4M32C-100F1I Datasheet(HTML) 2 Page - Aeroflex Circuit Technology |
2 / 5 page Aeroflex Circuit Technology SCD3866 REV 1 12/4/98 Plainview NY (516) 694-6700 2 General Description Utilizing AMD’s Sector Erase Flash Memory Die, the ACT-F4M32A is a high speed, 128 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications. The ACT-F4M32A consists of eight high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each). The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades of 100ns, 120ns and 150ns maximum are standard. The ACT-F4M32A is offered in two different hermetically sealed co-fired 68 lead ceramic packages. This allows operation in a military environment temperature range of -55°C to +125°C. The ACT-F4M32A can be programmed (both read and write functions) in-system using the +5.0V VCC power supply. A 12.0V VPP is not required for programming or erase operations. The end of program or erase is detected by the RY/BY pin, Data Polling of DQ7, or by the Toggle bit (DQ6). The ACT-F4M32A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be terminated. Each block can be independently erased and programmed 100,000 times at +25°C. For Detail Information regarding the operation of the Am29F016 Sector Erase Flash Memory, see the AMD datasheet (Publication 18805). |
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