STP28NM50N datasheet(4/21 Pages) STMICROELECTRONICS

Part #	STP28NM50N

Description	N-channel Power MOSFETs developed using the second generation of MDmesh

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N

4/21

Doc ID 17432 Rev 2

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

500

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating, @125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 10.5 A

0.135 0.158

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

-

1735

122

4.3

-

pF

Coss(eq)

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance time related

VGS = 0, VDS = 0 to 50 V

-

418

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400 V, ID = 21 A,

VGS = 10 V,

(see Figure 19)

-

50

9.5

25

-

nC

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

-2.7

-

Ω

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