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FDP12N60NZ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDP12N60NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 www.fairchildsemi.com 1 March 2013 FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features •RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge ( Typ. 26 nC) • Low Crss ( Typ. 12 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt- age MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher ava- lanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FDP12N60NZ FDPF12N60NZ Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current - Continuous (TC = 25 oC) 12 12* A - Continuous (TC = 100 oC) 7.2 7.2* IDM Drain Current - Pulsed (Note 1) 48 48* A EAS Single Pulsed Avalanche Energy (Note 2) 565 mJ IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ dv/dt MOSFET dv/dt Ruggedness 20 V/ns Peak Diode Recovery dv/dt (Note 3) 10 V/ns PD Power Dissipation (TC = 25 oC) 240 39 W - Derate above 25oC2.0 0.3 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDP12N60NZ FDPF12N60NZ Unit RJC Thermal Resistance, Junction to Case, Max. 0.52 3.2 oC/W RCS Thermal Resistance, Case to Sink Typ. 0.5 - RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 *Drain current limited by maximum junction temperature G S D G S D TO-220F S D G S D G TO-220 |
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