©2010 Fairchild Semiconductor Corporation

FDP12N60NZ / FDPF12N60NZ Rev. C1

www.fairchildsemi.com

1

March 2013

FDP12N60NZ / FDPF12N60NZ



600 V, 12 A, 650 m



Features

• Low Gate Charge ( Typ. 26 nC)

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

Description

age MOSFET family based on advanced planar stripe and

DMOS technology. This advanced MOSFET family has the

smallest on-state resistance among the planar MOSFET, and

also provides superior switching performance and higher ava-

lanche energy strength. In addition, internal gate-source ESD

diode allows UniFET II MOSFET to withstand over 2kV HBM

surge stress. This device family is suitable for switching power

converter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp ballasts.

Thermal Characteristics

Symbol

Parameter

FDP12N60NZ FDPF12N60NZ

Unit

Drain to Source Voltage

600

V

Gate to Source Voltage

±30

V

Drain Current

12

12*

A

7.2

7.2*

Drain Current

- Pulsed

(Note 1)

48

48*

A

Single Pulsed Avalanche Energy

(Note 2)

565

mJ

Avalanche Current

(Note 1)

12

A

Repetitive Avalanche Energy

(Note 1)

24

mJ

dv/dt

MOSFET dv/dt Ruggedness

20

V/ns

Peak Diode Recovery dv/dt

(Note 3)

10

V/ns

Power Dissipation

240

39

W

0.3

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

FDP12N60NZ FDPF12N60NZ

Unit

Thermal Resistance, Junction to Case, Max.

0.52

3.2

Thermal Resistance, Case to Sink Typ.

0.5

-

Thermal Resistance, Junction to Ambient, Max.

62.5

62.5

*Drain current limited by maximum junction temperature

G

S

D

G

S

D

TO-220F

S

D

G

S

D

G

TO-220