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SBT1060 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # SBT1060
Description  Schottky Barrier Rectifier Diodes . Single Diode
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

SBT1060 Datasheet(HTML) 1 Page - Diotec Semiconductor

  SBT1060 Datasheet HTML 1Page - Diotec Semiconductor SBT1060 Datasheet HTML 2Page - Diotec Semiconductor  
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SBT1020 ... SBT10100
SBT1020 ... SBT10100
Schottky Barrier Rectifier Diodes – Single Diode
Schottky-Barrier-Gleichrichterdioden – Einzeldiode
Version 2013-05-07
Dimensions - Maße [mm]
Nominal current
Nennstrom
10 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case – Kunststoffgehäuse
TO-220AC
Weight approx.
Gewicht ca.
1.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 10 A
SBT1020
20
20
< 0.48
< 0.55
SBT1030
30
30
< 0.48
< 0.55
SBT1040
40
40
< 0.48
< 0.55
SBT1045
45
45
< 0.48
< 0.55
SBT1050
50
50
< 0.63
< 0.70
SBT1060
60
60
< 0.63
< 0.70
SBT1090
90
90
< 0.78
< 0.85
SBT10100
100
100
< 0.78
< 0.85
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
10 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SBT1020...
SBT1060
TA = 25°C
IFSM
135/150 A
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SBT1090...
SBT10100
TA = 25°C
IFSM
115/125 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
80 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
≤ 200°C
1
Tj = 25°C
1
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
4
3
1
Type
Typ
5.08
±0.1
0.8
±0.2
1.3
±0.1
10.1
±0.3
Ø
±0.2
3.8
1.2
±0.2
0.42±0.1
4.5
±0.2
2.67
±0.2
4
3
1


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