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DTS2212 Datasheet(PDF) 4 Page - DinTek Semiconductor Co,.Ltd |
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DTS2212 Datasheet(HTML) 4 Page - DinTek Semiconductor Co,.Ltd |
4 / 9 page ![]() 4 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 ID =1A VGS =4.5 V VGS =2.5 V T J - Junction Temperature (°C) 0.0 0.1 0.2 0.3 0.4 123 45 TJ = 25 °C TJ = 125 °C ID =1A V GS - Gate-to-Source Voltage (V) 0 1 5 Time (s) 3 4 0 0 6 110 0.1 0.01 2 100 Source-Drain Diode Forward Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 1 0.1 10 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 0.20 0.35 0.50 0.65 0.80 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Temperature (°C) 10 0.1 0.1 1 10 1 TA = 25 °C Single Pulse 1ms 0.01 1s,10s DC 100 Limited by RDS(on)* 10 ms 100 ms 100 μs BVDSS Limited V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified DT www.din-tek.jp |
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