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MOC207R2M Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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MOC207R2M Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC205M, MOC206M, MOC207M Rev. 1.0.2 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Notes: 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second Symbol Rating Value Unit Emitter IF Forward Current – Continuous 60 mA IF (pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25°C Derate above 25°C 90 0.8 mW mW/°C Detector VCEO Collector-Emitter Voltage 70 V VECO Emitter-Collector Voltage 7.0 V VCBO Collector-Base Voltage 70 V IC Collector Current-Continuous 150 mA PD Detector Power Dissipation @ TA = 25°C Derate above 25°C 150 1.76 mW mW/°C Total Device VISO Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute)(1)(2)(3) 2500 Vac(rms) PD Total Device Power Dissipation @ TA = 25°C Derate above 25°C 250 2.94 mW mW/°C TA Ambient Operating Temperature Range -40 to +100 °C Tstg Storage Temperature Range -40 to +150 °C |
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