ACE8202B datasheet(2/7 Pages) ACE

Part #	ACE8202B

Description	Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE8202B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

2

Ordering information

ACE8202B XX + H

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250 uA

20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

0.4

0.65

1

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

6.5

10

uA

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

1

uA

Maximum Body-Diode

Continuous Current

IS

2.5

A

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=8A

15.7

21

m

Ω

VGS=2.5V, ID=7A

26

35

Forward Transconductance

gfs

VDS=5V,ID=7A

34

S

Diode Forward Voltage

VSD

ISD=2.5A, VGS=0V

0.77

1

V

Switching

Total Gate Charge

Qg

VDS=10V, VGS=4.5V, ID=7A

11

nC

Gate-Source Charge

Qgs

2

Gate-Drain Charge

Qgd

3.2

Turn-On Time

td(on)

VGS=5V, RL=2.5Ω, VDS=10V,

RGEN=3Ω

300

nS

tr

600

Turn-Off Time

td(off)

790

tf

440

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=10V, f=1MHz

920

pF

Output Capacitance

Coss

155

REVERSE Transfer Capacitance

Crss

75

NN : DFN3*3-8L

Pb - free

Halogen - free

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ACE8202B Datasheet(PDF) 2 Page - ACE Technology Co., LTD.

ACE8202B Datasheet(HTML) 2 Page - ACE Technology Co., LTD.

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