AP2530GY-HF datasheet(2/7 Pages) A-POWER

Part #	AP2530GY-HF

Description	Low Gate Charge, Low On-resistance

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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N-CH Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

30

-

V

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

-

0.02

-

V/℃

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V, ID=3A

-

72

mΩ

VGS=4.5V, ID=2A

-

125

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1

-

3

V

gfs

Forward Transconductance

VDS=5V, ID=3A

-

4

-

S

IDSS

Drain-Source Leakage Current

VDS=30V, VGS=0V

-

1

uA

Drain-Source Leakage Current (Tj=70

oC) V

DS=24V, VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=+20V, VDS=0V

-

+100

nA

Qg

Total Gate Charge

2

ID=3A

-

3

5

nC

Qgs

Gate-Source Charge

VDS=25V

-

1

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

-

2

-

nC

td(on)

Turn-on Delay Time

2

VDS=15V

-

6

-

ns

tr

Rise Time

ID=1A

-

8

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=10V

-

11

-

ns

tf

Fall Time

RD=15Ω

-2

-

ns

Ciss

Input Capacitance

VGS=0V

-

170

270

pF

Coss

Output Capacitance

VDS=25V

-

50

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

35

-

pF

Rg

Gate Resistance

f=1.0MHz

-

0.5

0.8

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

2

IS=0.9A, VGS=0V

-

1.3

V

trr

Reverse Recovery Time

2

IS=3A, VGS=0V

-

14

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

7

-

nC

2

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