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AP4410GM Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4410GM Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 5 page Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit 4 AP4410GM 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125 oC/W t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0 2 4 6 8 10 12 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) I D =10A V DS =15V 10 100 1000 10000 1 6 11 16 21 26 31 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 5V QGS QGD QG Charge |
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