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AP9T18GEH Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP9T18GEH Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A - - 14 mΩ VGS=2.5V, ID=10A - - 28 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.4 - 1.5 V gfs Forward Transconductance VDS=5V, ID=20A - 20 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 oC) VDS=16V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=±12V - - ±30 uA Qg Total Gate Charge 2 ID=20A - 16 26 nC Qgs Gate-Source Charge VDS=16V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC td(on) Turn-on Delay Time 2 VDS=10V - 8 - ns tr Rise Time ID=20A - 84 - ns td(off) Turn-off Delay Time RG=1.0Ω,VGS=5V - 19 - ns tf Fall Time RD=0.5Ω -14 - ns Ciss Input Capacitance VGS=0V - 1080 1730 pF Coss Output Capacitance VDS=20V - 205 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF Rg Gate Resistance f=1.0MHz - 3.6 5.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time 2 IS=20A, VGS=0V, - 26 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 19 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP9T18GEH/J |
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