Discrete POWER & Signal

Technologies

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

32

V

Collector-Emitter Voltage

32

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous

500

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

© 1997 Fairchild Semiconductor Corporation

PNP General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 300 mA.

Sourced from Process 68. See BC857A for characteristics.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BCW30

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

357

°C/W

BCW30

SOT-23

Mark: C2

C

B

E

W30, Rev B