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AP2613GY-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP2613GY-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Fast Switching Characteristic BVDSS -20V ▼ ▼ ▼ ▼ Lower Gate Charge RDS(ON) 37mΩ ▼ ▼ ▼ ▼ Small Footprint & Low Profile Package ID - 6.2A ▼ ▼ ▼ ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice Thermal Data 201111081 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range 2 -55 to 150 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 -4.9 Pulsed Drain Current 1 -24 Halogen-Free Product 1 AP2613GY-HF Rating - 20 + 8 -6.2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for all commercial-industrial applications. G D S D D D D G S SOT-26 |
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