Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Lower Gate Charge

30V

▼ Simple Drive Requirement

6mΩ

▼ Fast Switching Characteristic

18A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

℃

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

50

℃

/W

Data and specifications subject to change without notice

RoHS-compliant Product

Thermal Data

Parameter

Total Power Dissipation

2.5

-55 to 150

Operating Junction Temperature Range

-55 to 150

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Storage Temperature Range

Continuous Drain Current

3

15

Pulsed Drain Current

1

50

201203072

1

AP9412BGM

Rating

30

+20

18

Advanced Power MOSFETs from APEC provide the designer with the best

combination of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial surface

mount applications and suited for low voltage applications such as DC/DC

converters.

S

S

S

G

D

D

D

D

SO-8

G

D

S