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AP9435GG-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9435GG-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS -30V ▼ Fast Switching Characteristic RDS(ON) 50mΩ ▼ Single Drive Requirement ID - 4.2A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Data and specifications subject to change without notice 201010053 1 AP9435GG-HF Rating - 30 +20 - 4.2 0.01 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V 3 Linear Derating Factor Continuous Drain Current, VGS @ 10V 3 -3.4 Pulsed Drain Current 1 -20 Halogen-Free Product Thermal Data Parameter Total Power Dissipation 1.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Storage Temperature Range G D S D G D S SOT-89 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. |
Similar Part No. - AP9435GG-HF |
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Similar Description - AP9435GG-HF |
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