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AP9451GG-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9451GG-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ Small Package Outline RDS(ON) 135mΩ ▼ Capable of 2.5V Gate Drive ID - 2.3A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Data and specifications subject to change without notice 201106303 1 AP9451GG-HF Rating - 20 +12 -2.3 0.01 Halogen-Free Product Continuous Drain Current 3 -1.9 Pulsed Drain Current 1 -12 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Linear Derating Factor 1.25 -55 to 150 G D S D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D G S SOT-89 D |
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