Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Simple Drive Requirement

-20V

▼ Small Package Outline

135mΩ

▼ Capable of 2.5V Gate Drive

- 2.3A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

100

℃/W

Data and specifications subject to change without notice

201106303

1

AP9451GG-HF

Rating

- 20

+12

-2.3

0.01

Halogen-Free Product

Continuous Drain Current

3

-1.9

Pulsed Drain Current

1

-12

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

-55 to 150

Linear Derating Factor

1.25

-55 to 150

G

D

S

D

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, ultra low

on-resistance and cost-effectiveness.

D

G

S

SOT-89

D