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AP9916GH Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part # AP9916GH
Description  Low on-resistance, Capable of 2.5V gate drive
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9916GH Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
18
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
-
25
VGS=2.5V, ID=5.2A
-
-
40
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
18
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=18V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=125
oC)
VDS=18V ,VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=18A
-
17.5
-
nC
Qgs
Gate-Source Charge
VDS=18V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
7.9
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
7.3
-
ns
tr
Rise Time
ID=18A
-
98
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
25.6
-
ns
tf
Fall Time
RD=0.56Ω
-98
-
ns
Ciss
Input Capacitance
VGS=0V
-
527
-
pF
Coss
Output Capacitance
VDS=18V
-
258
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
112
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.3V
-
-
35
A
ISM
Pulsed Source Current ( Body Diode )
1
--
90
A
VSD
Forward On Voltage
2
Tj=25℃, IS=35A, VGS=0V
-
-
1.3
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9916GH/J
± 8V
±100


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