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AP4523GD Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4523GD Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 7 page Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge N-CH BVDSS 40V ▼ ▼ ▼ ▼ Fast Switching Speed RDS(ON) 40mΩ ▼ ▼ ▼ ▼ PDIP-8 Package ID 5.6A ▼ ▼ ▼ ▼ RoHS Compliant P-CH BVDSS -40V RDS(ON) 52mΩ Description ID -5.1A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±10 ±20 V ID@TA=25℃ Continuous Drain Current 3 5.6 -5.1 A ID@TA=70℃ Continuous Drain Current 3 4.5 -4 A IDM Pulsed Drain Current 1 30 -30 A PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Parameter 201129051-1/7 Thermal Data AP4523GD Pb Free Plating Product D1 D1 D2 D2 S1 G1 S2 G2 PDIP-8 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 D2 S2 G1 D1 S1 |
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