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AP55T06GS-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP55T06GS-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP55T06GS-HF Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Maximum Continuous Drain Current Fig 12. Transfer Characteristics v.s. Case Temperature 4 0 2 4 6 8 10 0 102030 Q G , Total Gate Charge (nC) I D =24A V DS =48V 0 400 800 1200 1600 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 8 16 24 32 40 25 50 75 100 125 150 T C , Case Temperature ( o C ) 0 20 40 60 80 024 68 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V T j = -40 o C Operation in this area limited by RDS(ON) |
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