LMBT5087LT1G_11 datasheet(2/7 Pages) LRC

Part #	LMBT5087LT1G

Description	Low Noise Transistor PNP Silicon RoHS requirements.

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

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LMBT5087LT1G

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

M a x

Unit

ON CHARACTERISTICS

DC Current Gain

h FE

––

(I C = –100

µAdc, V

CE = –5.0 Vdc)

250

800

(I C = –1.0 mAdc, V CE = –5.0 Vdc)

250

––

(I C = –10 mAdc, V CE = –5.0 Vdc)

250

––

Collector–Emitter Saturation Voltage

V CE(sat)

––

– 0.3

Vdc

(I C = –10 mAdc, I B = –1.0 mAdc)

Base–Emitter Saturation Voltage

V BE(sat)

––

– 0.85

Vdc

(I C = –10 mAdc, I B = –1.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

f T

40

—

MHz

(I C = –500

µAdc, V

CE= –5.0 Vdc, f = 20 MHz)

Output Capacitance

C obo

—

4.0

pF

(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)

Small–Signal Current Gain

h fe

250

900

—

(I C= –1.0mAdc, V CE = –5.0Vdc, f = 1.0 kHz)

Noise Figure

N F

dB

(I C = –20 mAdc, V CE= –5.0 Vdc,Rs=10k

Ω, f = 1.0 kHz)

—

2.0

(I C = –100

µAdc, V

CE= –5.0 Vdc,R

s=3.0k

Ω, f = 1.0 kHz)

—

2.0

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