LMBT6427LT1G_11 datasheet(2/6 Pages) LRC

Part #	LMBT6427LT1G

Description	Darlington Transistors NPN Silicon RoHS requirements.

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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2 / 6 page

LESHAN RADIO COMPANY, LTD.

LMBT6427LT1G

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

hFE

––

(I C = 10 mAdc, V CE = 5.0 Vdc)

10,000

100,000

(I C = 100 mAdc, V CE = 5.0Vdc)

20,000

200,000

(I C = 500 mAdc, V CE = 5.0Vdc)

14,000

140,000

Collector–Emitter Saturation Voltage

VCE(sat)(3)

Vdc

(I C = 50 mAdc, I B = 0.5 mAdc)

––

1.2

(I C = 500 mAdc, I B = 0.5 mAdc)

––

1.5

Base–Emitter Saturation Voltage

V BE(sat)

––

2.0

Vdc

(I C = 500 mAdc, I B = 0.5 mAdc)

Base–Emitter On Voltage

V BE(on)

—

1.75

Vdc

(I C = 50 mAdc, V CE = 5.0Vdc)

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

C obo

––

7.0

pF

Input Capacitance

C ibo

––

15

pF

(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)

Current Gain–High Frequency

|h

fe |

1.3

—

Vdc

(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)

Noise Finure

NF

—

10

dB

(V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 k

Ω, f = 1.0 kHz )

3. Pulse Tent: Pulse Width = 300

µs, Duty Cycle = 2.0%

R S

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

Rev.O 2/6

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